Ultra-Precision Titanium CNC Machining for Semiconductor Equipment

Semiconductor vacuum chambers and EUV/DUV lithography sub-assemblies demand sealing surfaces with sub-micron flatness and Ra ≤ 0.4 µm finish. Our 5-axis ultra-precision milling centers machine Grade 2 and Grade 5 Titanium to GD&T tolerances that prevent gas leakage pathways and particle generation at 10⁻⁹ Torr vacuum levels.

• Sealing surface flatness ≤ 1 µm per 300 mm — prevents gas leakage at UHV 10⁻⁹ Torr
• Ra ≤ 0.4 µm sealing finishes — eliminates micro-gaps that trap process gases
• Sub-micron GD&T profile control — helium leak rates < 1×10⁻⁹ atm·cc/sec

Titanium's native oxide layer and inherently low vapor pressure make it ideal for UHV environments. Our electropolishing and vacuum bake-out processes further reduce outgassing rates, ensuring chamber integrity for critical CVD/ALD thin-film deposition processes.

• Electropolishing removes surface contamination — outgassing rate < 1×10⁻¹² Torr·L/sec·cm²
• Vacuum bake-out at 250°C desorbs water vapor and hydrocarbons before final assembly
• Titanium's native TiO₂ layer prevents hydrogen permeation at elevated process temperatures

CVD and ALD showerheads require thousands of precision-drilled micro-holes that distribute precursor gases with atomic-level uniformity across 300 mm wafers. Our CNC micro-drilling achieves hole diameters down to Ø0.2 mm with positional accuracy of ±0.005 mm — ensuring consistent gas flow impedance across the entire showerhead surface. Post-drilling electropolishing removes micro-burrs and achieves Ra ≤ 0.1 µm ID finish.

• Micro-hole drilling down to Ø0.2 mm — positional accuracy ±0.005 mm across full plate
• Electropolished ID finish Ra ≤ 0.1 µm — eliminates turbulence and particle nucleation sites
• 100% optical hole inspection — verifies diameter, roundness, and burr-free condition

Post-machining electropolishing is critical for semiconductor gas delivery components. The process removes the mechanically deformed surface layer left by cutting tools — eliminating micro-cracks, burrs, and embedded contaminants that could shed particles during operation. The resulting mirror finish (Ra ≤ 0.1 µm) creates a chemically clean surface that resists precursor adsorption and minimizes chamber memory effects.

• Electropolishing removes 10-20 µm deformed layer — eliminates embedded micro-burrs and contaminants
• Mirror finish Ra ≤ 0.1 µm — prevents precursor adsorption and chamber memory effects
• Chemical passivation restores native TiO₂ layer — maximizes corrosion resistance to process gases

Semiconductor components undergo a validated multi-stage cleaning process after machining — beginning with solvent degreasing to remove cutting oils, followed by alkaline and acid washes in ultrasonic baths, and finishing with deionized water rinses. Final verification via solvent extract testing confirms hydrocarbon residues below 10 µg per component — meeting the purity requirements of leading-edge 2nm and 3nm wafer fabs.

• HEPA-filtered vertical laminar airflow — ≤ 100 particles (≥0.5 µm) per ft³
• Positive pressure differential — prevents ingress of unfiltered air
• Full-body cleanroom gowning with anti-static footwear — zero human-shed particle contamination

After final cleaning, all semiconductor components are transferred to an ISO Class 5 (Class 100) cleanroom environment for inspection, packaging, and sealing. Each component is double-bagged in anti-static cleanroom-grade polyethylene, with batch-specific labels documenting cleaning date, lot number, and hydrocarbon test results — ensuring fab-ready delivery.

• Ultrasonic degreasing with semiconductor-grade solvents — removes all machining residues
• DI water rinse to 18 MΩ·cm resistivity — zero ionic contamination on component surfaces
• Post-cleaning organic verification — residual contamination < 10 µg/cm²